Multi-chamber deposition of silicon oxynitride film for...

Details Multi-chamber deposition of silicon oxynitride film for... Multi-chamber deposition of silicon oxynitride film for...

2006-04-25

2006-04-25

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S717000, C438S950000

Reexamination Certificate

active

07033960

ABSTRACT:
Pinholes in a silicon oxynitride film are reduced by PECVD deposition of a plurality of silicon oxynitride sub-layers in a PECVD apparatus containing multiple chambers. Embodiments include forming a layer of amorphous carbon over a conductive layer, such as doped polycrystalline silicon, on a substrate, transferring the substrate to a multi-chamber PECVD tool and depositing 2 to 7, e.g., 5, sub-layers of dense silicon oxynitride at a total thickness of 300 to 700 Å.

REFERENCES:
patent: 6825114 (2004-11-01), Fisher et al.
patent: 6841341 (2005-01-01), Fairbairn et al.
patent: 6884733 (2005-04-01), Dakshina-Murthy et al.
Gao, Pei-Yuan, et al. “Hardmask Employing Multiple Layers Of Silicon Oxynitride” pp. 1-6 specification, pp. 1-3 formal drawings.

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