Semiconductor device manufacturing method

Details Semiconductor device manufacturing method Semiconductor device manufacturing method

2006-01-03

2006-01-03

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S393000, C438S638000

Reexamination Certificate

active

06982200

ABSTRACT:
Disclosed is a method of manufacturing a semiconductor device which has reliable buried interconnects (wirings) and a reliable MIM capacitor. An interconnect and a capacitor bottom electrode are formed inside a hole made in six insulation films. Then a barrier insulation film is formed on the uppermost film (of the above six insulation films) including the interconnect and the top face of the bottom electrode. After two insulation films are formed above the barrier insulation film, a hole is made in the two insulation films and a capacitor top electrode is buried in that hole. The barrier insulation film also functions as a capacity insulation film for the capacitor. Then, after three other insulation films are formed on the upper film (of the above two insulation films) including the top face of the top electrode, a hole is made in the barrier insulation film, the two insulation films, and the three other insulation films, and another interconnect is buried in that hole.

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