Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Flip chip
Reexamination Certificate
2006-01-03
2006-01-03
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Flip chip
C257S370000, C257S737000, C257S738000, C257S773000, C257S780000, C257S782000, C257S784000, C257S786000, C257S788000, C257S795000, C257SE23021
Reexamination Certificate
active
06982491
ABSTRACT:
A process for fabricating an integrated circuit package includes: providing a substrate having conductive traces therein, the substrate including a cavity therein; mounting a semiconductor die to a first surface of the substrate, in a flip-chip orientation such that a sensor portion of the semiconductor die is aligned with the cavity and conductive interconnects connect pads of the semiconductor die to the conductive traces of the substrate; filling an area surrounding the interconnects with an underfill material; and mounting a plurality of conductive balls on the first surface of the substrate and in electrical connection with the conductive traces such that ones of the conductive balls are connected to ones of the pads of the semiconductor die via the conductive traces.
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Dr. Ken Gilleo, MEMS Packaging Issues and Materials, Cookson Electronics.
Chow Lap Keung
Fan Chun Ho
Labeeb Sadak Thamby
ASAT Ltd.
Keating & Bennett LLP
Soward Ida M.
Zarabian Amir
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