Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-05
2006-09-05
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C977S848000
Reexamination Certificate
active
07101761
ABSTRACT:
A method is described for providing a nanostructure suspended above a substrate surface. The method includes providing a nanostructure encased in an oxide shell on a substrate and depositing a sacrificial material and a support material over the oxide encased nanostructure. Then, the sacrificial material is removed to expose the oxide encased nanostructure. Once the oxide encased nanostructure has been exposed, the oxide shell is removed from the oxide encased nanostructure such that the nanostructure is suspended above the substrate surface.
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Brask Justin K.
Chau Robert S.
Hareland Scott A.
Metz Matthew V.
Blakely , Sokoloff, Taylor & Zafman LLP
Coleman W. David
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