Method of manufacturing high voltage transistor in flash...

Details Method of manufacturing high voltage transistor in flash... Method of manufacturing high voltage transistor in flash...

2006-01-31

2006-01-31

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S439000, C438S450000, C438S257000

Reexamination Certificate

active

06991983

ABSTRACT:
Disclosed is a method of manufacturing a high voltage transistor in a flash memory device. The method can prohibit a punch leakage current of an isolation film while satisfying active characteristics of the high voltage transistor without the need for a mask process for field stop of the high voltage transistor ion implantation process and a mask removal process.

REFERENCES:
patent: 6207510 (2001-03-01), Abeln et al.
patent: 6573556 (2003-06-01), Doong et al.
patent: 6759299 (2004-07-01), Lee et al.

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