Semiconductor device including field-effect transistor

Details Semiconductor device including field-effect transistor Semiconductor device including field-effect transistor

2006-09-05

2006-09-05

Whitehead, Jr., Carl (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S300000

Reexamination Certificate

active

07102203

ABSTRACT:
A semiconductor device capable of inhibiting a threshold voltage from increase also when employing a gate electrode consisting of a metal is provided. This semiconductor device comprises a pair of source/drain regions lifted up in an elevated structure, a gate insulator film, formed on a channel region, consisting of a high dielectric constant insulator film having a dielectric constant larger than 3.9 and a gate electrode including a first metal layer coming into contact with the gate insulator film and having a work function controlled to have a Fermi level around the energy level of a band gap end of silicon constituting the source/drain regions.

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Brian Doyle, et al., “Transistor Elements for 30nm Physical Gate Lengths and Beyond”, Intel Technology Journal, vol. 6, Issue 2, May 16, 2002, ISSN 1535766X.

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