Method of growing a thin film onto a substrate

Details Method of growing a thin film onto a substrate Method of growing a thin film onto a substrate

2006-03-28

2006-03-28

Kunemund, Robert (Department: 1722)

Coating apparatus

Gas or vapor deposition

C118S718000, C117S084000, C117S094000, C117S095000

Reexamination Certificate

active

07018478

ABSTRACT:
A method of growing a thin film onto a substrate placed in a reaction chamber according to the ALD method by subjecting the substrate to alternate and successive surface reactions. The method includes providing a first reactant source and providing an inactive gas source. A first reactant is fed from the first reactant source in the form of repeated alternating pulses to a reaction chamber via a first conduit. The first reactant is allowed to react with the surface of the substrate in the reaction chamber. Inactive gas is fed from the inactive gas source into the first conduit via a second conduit that is connected to the first conduit at a first connection point so as to create a gas phase barrier between the repeated alternating pulses of the first reactant entering the reaction chamber. The inactive gas is withdrawn from said first conduit via a third conduit connected to the first conduit at a second connection point.

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Handbook of Crystal Growth 3, Thin Films and epitaxy, Part B. Growth Mechanisms and Dynamics, p. 625.
Niinisto et al., “ALD precursor chemistry: evolution and future challenges”, Journal de Physsique IV. vol. 9 (1999), pp. Pr8-837-Pr8-852.
M. Leskela et al., “Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications”, Materials Science & Engineering, vol. B41 (1996), pp. 23-29.
Tuomo Suntola, “Atomic layer epitaxy”, Thin Solid Films, vol. 216 (1992), pp. 84-89.

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