Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2006-01-10

2006-01-10

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S560000

Reexamination Certificate

active

06984565

ABSTRACT:
A first insulating film is formed on a base substrate, then a second insulating film is formed on the first insulating film, the second insulating film having a relative permittivity higher than that of the first insulating film. A gate electrode is formed on the second insulating film. The second insulating film forming includes first to sixth steps, and a cycle consisting of the first to sixth steps is repeated.

REFERENCES:
patent: 5576226 (1996-11-01), Hwang
patent: 5882993 (1999-03-01), Gardner et al.
patent: 6475910 (2002-11-01), Sneh
patent: 6479400 (2002-11-01), Suzuki
patent: 2001-274260 (2001-10-01), None
patent: 2003-309188 (2003-10-01), None
Kawahara et al., “Effect of Purge Time on the Properties of HfO2Films Prepared by Atomic Layer Deposition”, IEICE Trans. Electron., vol. E87-C, No. 1, Jan. 2004.

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