Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-14
2006-03-14
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S654000, C438S612000
Reexamination Certificate
active
07012018
ABSTRACT:
An integrated circuit chip501has a plurality of contact pads (FIG.5B) to be connected by reflow attachment510to outside parts. The chip comprises a deposited layer505of nickel/titanium alloy on each of the pads; the alloy has a composition and crystalline structure operable in reversible phase transitions under thermomechanical stress, whereby mechanical strain is absorbed by the alloy layer. Preferably, the alloy has between 55.0 and 56.0 weight % nickel, between 44.0 and 45.0 weight % titanium, and a thickness in the range from 0.3 to 6.0 μm, recrystallized after deposition in a temperature range from 450 to 600° C. for a time period between 4 and 6 min. A layer506of solderable metal is on the alloy, operable as diffusion barrier after reflow attachment.
REFERENCES:
patent: 4950623 (1990-08-01), Dishon
patent: 6255723 (2001-07-01), Light et al.
patent: 6383305 (2002-05-01), Chazelas et al.
patent: 6489229 (2002-12-01), Sheridan et al.
patent: 6544880 (2003-04-01), Akram
patent: 0753990 (1997-01-01), None
patent: 01081264 (1989-03-01), None
patent: 09129647 (1997-05-01), None
patent: 2001024021 (2001-01-01), None
Brady III Wade James
Thai Luan
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