Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2006-04-18

2006-04-18

Tran, Minhloan (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S153000, C438S154000, C438S155000, C438S167000, C438S738000, C438S735000, C438S736000, C438S749000

Reexamination Certificate

active

07029965

ABSTRACT:
A method for efficiently manufacturing a semiconductor device, the semiconductor device having an FET and a pn junction diode provided on the same semiconductor substrate, the FET having a Schottky junction for a gate electrode and a gate recess, includes the steps of forming a channel layer, a first etching stopper layer, an n-type common layer, a second etching stopper layer, a p-type layer, and a third etching stopper layer on the semiconductor substrate in that order; etching away the p-type layer and the third etching stopper layer in specific regions; simultaneously forming a source electrode, a drain electrode, a cathode; forming a mask having an opening for forming a gate recess and a gate electrode and an opening for forming an anode; forming the gate recess by etching while the third etching stopper layer prevents the p-type layer from being etched; and simultaneously forming the gate electrode and the anode.

REFERENCES:
patent: 08-255838 (1996-10-01), None
patent: 08-340213 (1996-12-01), None

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