Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-28
2006-03-28
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S725000, C438S780000, C438S781000, C438S783000
Reexamination Certificate
active
07018918
ABSTRACT:
An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
REFERENCES:
patent: 4755559 (1988-07-01), Kishida et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6770537 (2004-08-01), Farrar
patent: 2002/0030297 (2002-03-01), Gallagher et al.
patent: 2003/0004218 (2003-01-01), Allen et al.
patent: 2003/0057414 (2003-03-01), Dalton et al.
patent: 2003/0151031 (2003-08-01), Li et al.
patent: 2004/0061229 (2004-04-01), Moslehl
Barns Chris E.
Goodner Michael D.
Gracias David H.
Kloster Grant M.
Leu Jihperng
Brewster William M.
Plimier Michael D.
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