Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-28
2006-03-28
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000, C257S327000, C257S618000
Reexamination Certificate
active
07019349
ABSTRACT:
A semiconductor memory device includes a trench capacitor formed in a major surface portion of a semiconductor substrate. The trench capacitor includes a storage node electrode provided within a trench formed in the major surface portion of substrate, a plate electrode disposed opposed to the storage node electrode, and a capacitor insulation film provided between the storage node electrode and plate electrode and formed of high-dielectric-constant material. The memory device further includes an insulated-gate field-effect transistor formed in the major surface portion of substrate, a contact portion that electrically connects a source or drain of the IGFET and the storage node electrode, and a cap structure formed between the contact portion and upper parts of the storage node electrode.
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Aochi Hideaki
Katsumata Ryota
Banner & Witcoff , Ltd.
Flynn Nathan J.
Sefer Ahmed N.
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