Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-30
2005-08-30
Fahmy, Wael (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S251000, C438S253000, C438S396000
Reexamination Certificate
active
06936514
ABSTRACT:
An SOI semiconductor component having a portion of a circuit element in the handle wafer and a method for manufacturing the SOI semiconductor component. An SOI substrate has a handle wafer bonded to an active wafer via a dielectric material. A shallow trench isolation structure is formed from the active wafer. A plate or electrode of a capacitor is manufactured in the handle wafer. The other plate or electrode of the capacitor is formed through the shallow trench isolation structure. A circuit element is manufactured in the active wafer such that the manufacturing steps for forming the capacitor and those for forming the circuit element may be decoupled from each other.
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Advanced Micro Devices , Inc.
Dover Rennie Wm.
Drake Paul
Fahmy Wael
Peralta Ginette
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