Enhanced atomic layer deposition

Details Enhanced atomic layer deposition Enhanced atomic layer deposition

2005-11-22

2005-11-22

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S641000, C438S674000

Reexamination Certificate

active

06967154

ABSTRACT:
A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substrate. In an embodiment, the layer includes at least one element from each of the first and second precursors. In an embodiment, the layer is TaN. In an embodiment, the precursors are TaF5and NH3. In an embodiment, the plasma begins during the purge gas flow between the pulse of first precursor and the pulse of second precursor. In an embodiment, the enhancement is thermal energy. In an embodiment, the thermal energy is greater than generally accepted for ALD (>300 degrees Celsius). The enhancement assists the reaction of the precursors to deposit a layer on a substrate.

REFERENCES:
patent: 3381114 (1968-04-01), Nakanuma
patent: 4058430 (1977-11-01), Suntola et al.
patent: 4215156 (1980-07-01), Dalal et al.
patent: 4333808 (1982-06-01), Bhattacharyya et al.
patent: 4389973 (1983-06-01), Suntola et al.
patent: 4399424 (1983-08-01), Rigby
patent: 4413022 (1983-11-01), Suntola et al.
patent: 4590042 (1986-05-01), Drage
patent: 4647947 (1987-03-01), Takeoka et al.
patent: 4757360 (1988-07-01), Faraone et al.
patent: 4767641 (1988-08-01), Kieser et al.
patent: 4815962 (1989-03-01), Cardone
patent: 4920071 (1990-04-01), Thomas
patent: 4947221 (1990-08-01), Stewart et al.
patent: 4993358 (1991-02-01), Mahawili
patent: 5006192 (1991-04-01), Deguchi
patent: 5080928 (1992-01-01), Klinedinst et al.
patent: 5091207 (1992-02-01), Tanaka
patent: 5198029 (1993-03-01), Dutta et al.
patent: 5262199 (1993-11-01), Desu et al.
patent: 5429966 (1995-07-01), Wu et al.
patent: 5595606 (1997-01-01), Fujikawa et al.
patent: 5698022 (1997-12-01), Glassman et al.
patent: 5735960 (1998-04-01), Sandhu et al.
patent: 5795808 (1998-08-01), Park
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5822256 (1998-10-01), Bauer et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 5840897 (1998-11-01), Kirlin et al.
patent: 5855675 (1999-01-01), Doering et al.
patent: 5879459 (1999-03-01), Gadgil et al.
patent: 5916365 (1999-06-01), Sherman
patent: 5950925 (1999-09-01), Fukunaga et al.
patent: 5972430 (1999-10-01), DiMeo, Jr. et al.
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6015590 (2000-01-01), Suntola et al.
patent: 6020024 (2000-02-01), Maiti et al.
patent: 6027961 (2000-02-01), Maiti et al.
patent: 6057271 (2000-05-01), Kenjiro et al.
patent: 6059885 (2000-05-01), Ohashi et al.
patent: 6110529 (2000-08-01), Gardiner et al.
patent: 6161500 (2000-12-01), Kopacz et al.
patent: 6171900 (2001-01-01), Sun
patent: 6174377 (2001-01-01), Doering et al.
patent: 6200893 (2001-03-01), Sneh
patent: 6203613 (2001-03-01), Gates et al.
patent: 6206972 (2001-03-01), Dunham
patent: 6211035 (2001-04-01), Moise et al.
patent: 6225168 (2001-05-01), Gardner et al.
patent: 6281144 (2001-08-01), Cleary et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6302964 (2001-10-01), Umotoy et al.
patent: 6303481 (2001-10-01), Park
patent: 6325017 (2001-12-01), DeBoer et al.
patent: 6342277 (2002-01-01), Sherman
patent: 6348386 (2002-02-01), Gilmer
patent: 6360685 (2002-03-01), Xia et al.
patent: 6368941 (2002-04-01), Chen et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6383955 (2002-05-01), Matsuki
patent: 6387712 (2002-05-01), Yano et al.
patent: 6391769 (2002-05-01), Lee et al.
patent: 6410432 (2002-06-01), Hautala et al.
patent: 6420279 (2002-07-01), Ono et al.
patent: 6432779 (2002-08-01), Hobbs et al.
patent: 6444039 (2002-09-01), Nguyen
patent: 6444895 (2002-09-01), Nikawa
patent: 6445023 (2002-09-01), Vaartstra et al.
patent: 6448192 (2002-09-01), Kaushik
patent: 6458701 (2002-10-01), Chae et al.
patent: 6465334 (2002-10-01), Buynoski et al.
patent: 6468924 (2002-10-01), Lee et al.
patent: 6475276 (2002-11-01), Elers et al.
patent: 6482733 (2002-11-01), Raaijmakers et al.
patent: 6482740 (2002-11-01), Soininen et al.
patent: 6486047 (2002-11-01), Lee et al.
patent: 6495436 (2002-12-01), Ahn et al.
patent: 6514828 (2003-02-01), Ahn et al.
patent: 6521911 (2003-02-01), Parsons et al.
patent: 6524952 (2003-02-01), Srinivas et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6534420 (2003-03-01), Ahn et al.
patent: 6551399 (2003-04-01), Sneh et al.
patent: 6576053 (2003-06-01), Kim et al.
patent: 6590251 (2003-07-01), Kang et al.
patent: 6605549 (2003-08-01), Leu et al.
patent: 6617634 (2003-09-01), Marsh et al.
patent: 6620670 (2003-09-01), Song et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6656282 (2003-12-01), Kim et al.
patent: 6723642 (2004-04-01), Lim et al.
patent: 6727169 (2004-04-01), Raaijmakers et al.
patent: 2001/0009695 (2001-07-01), Saanila et al.
patent: 2001/0048981 (2001-12-01), Suzuki
patent: 2001/0050039 (2001-12-01), Park
patent: 2002/0089023 (2002-07-01), Yu et al.
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2002/0155688 (2002-10-01), Ahn et al.
patent: 2002/0155689 (2002-10-01), Ahn et al.
patent: 2002/0160125 (2002-10-01), Johnson
patent: 2002/0192974 (2002-12-01), Ahn et al.
patent: 2003/0017717 (2003-01-01), Ahn et al.
patent: 62-199019 (1987-09-01), None
patent: 5090169 (1993-04-01), None
patent: 2001-332546 (2001-11-01), None
International Technology for Semiconductor Roadmap, Industry Association, http://public.itrs.net/Files/2001ITRS/Links/1999_SIA_Roadmap/,(1999).
Aarik, Jaan , et al., “Atomic layer growth of epitaxial TiO/sub 2/thin films from TiCI/sub 4/ and H/sub 2/O on alpha -AI/sub 2/O/sub 3/ substrates”,Journal of Crystal Growth, 242(1-2). (2002),189-198.
Aarik, Jaan , et al., “Influence of substrate temperature on atomic layer growth and properties of HfO/sub 2/ thin films”,Thin Solid Films. 340(1-2), (1999), 110-116.
Aarik, Jaan , et al., “Phase transformations in hafnium dioxide thin films grown by atomIc layer doposition at high temperatures”,Applied Surface Science, 173(1-2), (Mar. 2001),15-21.
Aarik, Jaan , et al., “Texture Development in nanocrystalline hafnium dioxide thin films grown by atomic layer deposition”,Journal of Crystal Growth, 220, (2000),105-113.
Ahn, Kie Y., et al., “Highly Reliable Amorphous High-K Gate Oxide ZrO2”,Micron Docket No. 01-0516, (May 17, 2001 ),3 pages.
Alen, Petra , “Atomic Layer deposition of Ta(AI)N(C) thin films using trimethylaluminum as a reducing agent”,Journal of the Electrochemical Society, 148(10), (Oct. 2001),G566-G571.
Bendoraitis, J G., et al., “Optical energy gaps in the monoclinic oxides of hafnium and zirconium and their solid solutions”,Journal of Physical Chemistry, 69(10), (1965),3666-3667.
Bright, A A., et al., “Low-rate plasma oxidation of Si in a dilute oxygen/helium plasma for low-temperature gate quality Si/Sio2 interfaces”,Applied Physics Letters, 58(6), (Feb. 1991 ),619-621.
Bunshah, Rointan F., et al., “Deposition Technologies for Films and Coatings: Developments and Applications”,Park Ridge, N.J., U.S.A.: Noyes Publications, (1982),102-103.
Cava, R J., et al, “Improyament of the dielectric properties of Ta/sub 2/O/sub 5/ through substitution with Al/sub 2/O/sub 3/”,Applied Physics Letters, 70(11), (Mar. 1997),1396-8.
Cheng, Baohong , et al., “The Impact of High-k Gate Dielectrics and Metal Gate Electrodes on Sub-100nm MOSFET's”,IEEE Transactions on Electron Devices, 46(7), (Jul. 1999),1537-1544.
Copel, M. , et al., “Structure and stability of ultrathin zirconium oxide layers on Si(001)”,Applied Physics Letters, 76(4), (Jan. 2000),436-438.
De Flaviis, Franco , et al., “Planar microwave integrated phase-shifter design with high purity ferroelectric material”,IEEE Transactions on Microwave Theory & Techniques, 45(6), (Jun. 1997),963-969.
Desu, S B., “Minimization of Fatigue in Ferroelectric Films”,Physica Status Solidi A, 151(2), (1995),467-480.
Dusco, C , et al., “Depositio

Affiliated with

Also associated with

Rating

Enhanced atomic layer deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Enhanced atomic layer deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Enhanced atomic layer deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3519376