Method of producing a semiconductor device having copper wiring

Details Method of producing a semiconductor device having copper wiring Method of producing a semiconductor device having copper wiring

2005-12-27

2005-12-27

Smith, Brad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S653000, C438S687000

Reexamination Certificate

active

06979645

ABSTRACT:
A method of producing a semiconductor device capable of suppressing damages by corrosion on wiring in a catalyst process performed in electroless plating processing on a Co base material, etc. in producing a semiconductor device having wiring of Cu, etc., having steps of forming metal wiring including an additive on a first insulation film formed in a semiconductor substrate, and forming on the metal wiring a barrier layer for preventing diffusion of constituting elements of the metal wiring, wherein said additive is an element to reduce corrosion of the metal wiring at the time of forming the barrier layer in the step of forming the metal wiring.

REFERENCES:
patent: 6479384 (2002-11-01), Komai et al.
patent: 6809029 (2004-10-01), Nogami et al.
patent: 2004/0096592 (2004-05-01), Chebiam et al.
patent: 2004/0175509 (2004-09-01), Kolics et al.

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