Methods of forming semiconductive materials having flattened...

Details Methods of forming semiconductive materials having flattened... Methods of forming semiconductive materials having flattened...

2005-06-28

2005-06-28

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S429000, C438S493000, C438S502000, C438S509000

Reexamination Certificate

active

06911367

ABSTRACT:
The invention includes methods of forming epitaxially-grown semiconductive material having a flattened surface, and methods of incorporating such material into trenched regions and elevated/source drain regions. A method of forming epitaxially-grown semiconductive material having a flattened surface can include the following. Initially, a single crystal first semiconductor material is provided. A second semiconductive material is epitaxially grown from a surface of the first semiconductor material. The epitaxial growth is stopped, and subsequently an upper surface of the second semiconductor material is exposed to at least one hydrogen isotope to reduce curvature of (i.e., flatten) a surface of the second semiconductor material.

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