Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-08-23

2005-08-23

Thomas, Tom (Department: 2815)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S149000

Reexamination Certificate

active

06933184

ABSTRACT:
Conventionally, when a TFT provided with an LDD structure or a TFT provided with a GOLD structure is to be formed, there is a problem in that the manufacturing process becomes complicated, which leads to the increase in the number of steps. An electrode formed of a lamination of a first conductive layer (18b) and a second conductive layer (17c), which have different widths from each other, is formed. After the first conductive layer (18b) is selectively etched to form a first conductive layer (18c), a low concentration impurity region (25a) overlapping the first conductive layer (18c) and a low concentration impurity region (25b) not overlapping the first conductive layer18care formed by doping an impurity element at a low concentration.

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U.S. Appl. No. 10/105,282.

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