Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-06-07
2005-06-07
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S582000
Reexamination Certificate
active
06902968
ABSTRACT:
A method for manufacturing a metal-oxide-semiconductor transistor prevents the occurrence of a contact spiking phenomenon. The method includes forming a metal thin film and an isolation oxidation film on a semiconductor substrate, and selectively etching the isolation oxidation film such that the isolation oxidation film is left remaining only over a field oxidation film; heat treating the semiconductor substrate to form silicide by the metal thin film in gate, source, and drain regions; removing portions of the metal thin film that is not formed into silicide, that is, removing unreacted metal thin film; removing the isolation oxidation film left remaining on the field oxidation film; and heat treating the semiconductor substrate in an oxygen environment to form the unreacted metal thin film remaining on the field oxidation film into a metal oxidation film. The present invention is related also to a semiconductor device that employs a metal-oxide-semiconductor transistor made using the method.
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patent: 6350661 (2002-02-01), Lim et al.
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patent: 6479361 (2002-11-01), Park
Anam Semiconductor Inc.
Pham Hoai
Pillsbury Winthrop Shaw & Pittman LLP
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