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2005-08-09

2005-08-09

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S275000

Reexamination Certificate

active

06927129

ABSTRACT:
A method for fabricating a semiconductor device. Specifically, A method of manufacturing a semiconductor device comprising: depositing a first oxide layer over a periphery transistor comprising a gate stack, a drain side sidewall and a source side sidewall and over a core transistor comprising a gate stack, a source side sidewall and a drain side sidewall; etching the first oxide layer wherein a portion of the first oxide layer remains on the source side sidewall and on the drain side sidewall of the periphery transistor and on the source side sidewall and on the drain side sidewall of the core transistor; etching the first oxide layer from the source side sidewall of the core transistor; depositing a second oxide layer over the periphery transistor and the core transistor; and etching the second oxide layer wherein a portion of the second oxide layer remains on the first oxide layer formed on the source side sidewall and on the drain side sidewall of the periphery transistor and wherein the second oxide layer remains on the source side sidewall and on the drain side sidewall of the core transistor.

REFERENCES:
patent: 5933730 (1999-08-01), Sun et al.
patent: 6352891 (2002-03-01), Kasai
patent: 6506642 (2003-01-01), Luning et al.

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