Method of forming an element of a microelectronic circuit

Details Method of forming an element of a microelectronic circuit Method of forming an element of a microelectronic circuit

2005-12-06

2005-12-06

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S149000, C438S164000, C438S197000, C438S199000, C438S413000

Reexamination Certificate

active

06972228

ABSTRACT:
A method is described for forming an element of a microelectronic circuit. A sacrificial layer is formed on an upper surface of a support layer. The sacrificial layer is extremely thin and uniform. A height-defining layer is then formed on the sacrificial layer, whereafter the sacrificial layer is etched away so that a well-defined gap is left between an upper surface of the support layer and a lower surface of the height-defining layer. A monocrystalline semiconductor material is then selectively grown from a nucleation silicon site through the gap. The monocrystalline semiconductor material forms a monocrystalline layer having a thickness corresponding to the thickness of the original sacrificial layer.

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