Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2005-12-27

2005-12-27

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S296000, C438S424000

Reexamination Certificate

active

06979610

ABSTRACT:
The semiconductor device fabrication method comprises the step of forming a first insulation film14over a semiconductor substrate10;the step of forming a semiconductor film16over the first insulation film14;the step of forming a resist film20over the semiconductor film16;the step of forming openings21in the resist film20;the step of etching the semiconductor film16with the resist film20as the mask; the step of etching the first insulation film14with the semiconductor film16as the mask; and the step of etching the semiconductor substrate10with the first insulation film14as the mask to form trenches22in the semiconductor substrate10.Silicon nitride film is patterned, using a mask of polysilicon film, whereby the silicon nitride film can be etched with high selectivity to the polysilicon film. Accordingly, a good pattern of the silicon nitride film can be formed. Even when micronized trenches are formed in a semiconductor substrate with silicon nitride film as a mask, the trenches can be formed in a required configuration. Thus, good element isolation regions can be formed, further micronized.

REFERENCES:
patent: 6696365 (2004-02-01), Kumar et al.
patent: 2002/0019114 (2002-02-01), Trivedi
patent: 2002/0024111 (2002-02-01), Shin
patent: 2000-269192 (2000-09-01), None
patent: 2001-44274 (2001-02-01), None
patent: 2001-176841 (2001-06-01), None

Affiliated with

Also associated with

Rating

Semiconductor device fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3509856