LDMOS device with isolation guard rings

Details LDMOS device with isolation guard rings LDMOS device with isolation guard rings

2005-08-02

2005-08-02

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S337000, C257S343000, C257S409000, C257S122000, C257S126000

Reexamination Certificate

active

06924531

ABSTRACT:
A method of forming a LDMOS semiconductor device and structure for same. A preferred embodiment comprises forming a first guard ring around and proximate the drain of a LDMOS device, and forming a second guard ring around the first guard ring. The first guard ring comprises a P+ base guard ring, and the second guard ring comprises an N+ collector guard ring formed in a deep N-well, in one embodiment. The first guard ring and second guard ring prevent leakage current from flowing from the drain of the LDMOS device to the substrate.

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patent: 6747294 (2004-06-01), Gupta et al.

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