Method of manufacturing a semiconductor device

Details Method of manufacturing a semiconductor device Method of manufacturing a semiconductor device

2005-12-06

2005-12-06

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S272000, C438S532000, C438S589000

Reexamination Certificate

active

06972232

ABSTRACT:
There is provided a method of manufacturing a high quality P-channel trench MOSFET which stably operates. In the method of manufacturing a P-channel trench MOSFET having a P-type gate electrode, the process in which BF2ions are implanted into a polycrystalline silicon film and thereafter the heat treatment is carried out is performed plural times to thereby form the gate electrode, and it is possible to provide the P-channel trench MOSFET of high quality which stably operates.

REFERENCES:
patent: 5132238 (1992-07-01), Murakami et al.
patent: 6133099 (2000-10-01), Sawada
patent: 6674124 (2004-01-01), Hshieh et al.
patent: 6737323 (2004-05-01), Mo

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