Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

Filed on

2005-11-15

Date issued

2005-11-15

Examiner

Nguyen, Ha (Department: 2812)

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

C438S198000, C438S275000, C438S287000, C438S296000, C438S299000, C438S303000, C438S592000

Type

Reexamination Certificate

Status

active

Patent number

06964904

Description

ABSTRACT:
The present invention discloses method for manufacturing semiconductor device employing an EXTIGATE structure. In accordance with the method, a predetermined thickness of the device isolation film is etched to form a recess. The recess is then filled with a second nitride film. A stacked structure of a barrier metal film, a metal layer and a third nitride film on the second nitride film and the polysilicon film is formed on the entire surface and the etched via a photoetching process to form a gate electrode. An insulating film spacer is deposited on a sidewall of the gate electrode. The exposed portion of the polysilicon film using the third nitride film pattern and the insulating film spacer as a mask to form a polysilicon film pattern and an oxide film on a sidewall of the polysilicon film pattern.

REFERENCES:
patent: 5963818 (1999-10-01), Kao et al.
patent: 6081662 (2000-06-01), Murakami et al.
patent: 6326263 (2001-12-01), Hsieh
patent: 6645798 (2003-11-01), Hu
patent: 2002/0052085 (2002-05-01), Hwang et al.
patent: 2004/0051153 (2004-03-01), Yamamoto et al.

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3501105