Method for forming transistors with ultra-short gate feature

Details Method for forming transistors with ultra-short gate feature Method for forming transistors with ultra-short gate feature

2005-02-01

2005-02-01

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S230000, C438S303000, C438S514000

Reexamination Certificate

active

06849489

ABSTRACT:
A gate electrode is formed over but is insulated from a semiconductor body region for each of first and second transistors. Off-set spacers are formed along side-walls of the gate electrode of each of the first and second transistors. After forming the off-set spacers, a DDD implant is performed to form DDD source and DDD drain regions in the body region for the first transistor. After the DDD implant, main spacers are formed adjacent the off-set spacers of at least the first transistor. A LDD implant is performed to form LDD source and LDD drain regions for the second transistor. After forming the main spacers, a source/drain (S/D) implant is carried out to form a highly doped region within each of the DDD drain and DDD source regions and each of the LDD drain and LDD source regions.

REFERENCES:
patent: 4939558 (1990-07-01), Smayling et al.
patent: 5716861 (1998-02-01), Moslehi
patent: 5780891 (1998-07-01), Kauffman et al.
patent: 5793089 (1998-08-01), Fulford, Jr. et al.
patent: 5918125 (1999-06-01), Guo et al.
patent: 5920783 (1999-07-01), Tseng et al.
patent: 6143606 (2000-11-01), Wang et al.
patent: 6187619 (2001-02-01), Wu
patent: 6330187 (2001-12-01), Choi et al.
patent: 6346725 (2002-02-01), Ma et al.
patent: 6350665 (2002-02-01), Jin et al.
patent: 6512273 (2003-01-01), Krivokapic et al.

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