Method of manufacturing a trench gate type field effect...

Details Method of manufacturing a trench gate type field effect... Method of manufacturing a trench gate type field effect...

2005-08-09

2005-08-09

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S308000, C257S330000

Reexamination Certificate

active

06927130

ABSTRACT:
A trench gate type field effect transistor capable of effectively suppressing the short channel effect is formed with a shallow junction between a source and a drain, at low resistance, and through a simple process. In a method of manufacturing a trench gate type field effect transistor (100A), wherein an impurity introduced layer (13) which is to become a source or a drain is formed by introducing an impurity into a semiconductor substrate (1), a trench (15) is formed in the impurity introduced layer, a gate insulating film (5) is formed on a bottom face of the trench (15), and a gate (G) is formed so as to fill the trench (15), laser annealing for activating the impurity is performed after the impurity is introduced into the semiconductor substrate (1) and before the gate G is formed.

REFERENCES:
patent: 6040224 (2000-03-01), Tsukamoto
patent: 6355544 (2002-03-01), Essaian et al.
patent: 6365476 (2002-04-01), Talwar et al.
patent: 2004/0089892 (2004-05-01), Suzuki
patent: 55-048926 (1980-04-01), None
patent: 62-243366 (1987-10-01), None
patent: 01-194362 (1989-08-01), None
patent: 02-192168 (1990-07-01), None
patent: 2000-049334 (2000-02-01), None

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