Method of fabricating a semiconductor device that includes...

Details Method of fabricating a semiconductor device that includes... Method of fabricating a semiconductor device that includes...

2005-11-29

2005-11-29

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S596000

Reexamination Certificate

active

06969655

ABSTRACT:
Methods of fabricating semiconductor devices are disclosed. An example method may include providing a substrate including an active region and a non-active region and forming a first gate electrode comprising a dielectric layer pattern, a first conducting layer pattern, and a first insulating layer pattern, the first gate electrode functioning as a flash memory. The example method may also include forming spacers on sidewalls of the first gate electrode; forming a second gate electrode comprising a gate oxide, a second conducting layer pattern, and a second insulating layer pattern, the second gate electrode functioning as a normal gate electrode; and removing a residual conducting layer on one sidewall of the spacer.

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patent: 2002-026159 (2002-01-01), None

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