Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-30
2005-08-30
Baumeister, B. William (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S242000, C438S254000, C438S255000, C438S256000, C438S700000, C257S202000
Reexamination Certificate
active
06936510
ABSTRACT:
A semiconductor memory device comprising: a first insulating film covering the upper and side surfaces of a gate electrode; a second insulating film formed on the substrate covering the first insulating film; a pair of contact holes formed through the second insulating film and reaching the impurity diffusion regions; a conductive plug embedded in one of the contact holes; a third insulating film formed on the second insulating film covering the conductive plug, and having a first aperture on the other contact hole; a bit line formed on the third insulating film and connected to the other impurity diffusion region through the first aperture and the other contact hole; a fourth insulating film covering the upper and side surfaces of the bit line; a second aperture formed through the third insulating film in alignment with the fourth insulating film covering the side surface of the bit line; a storage electrode formed to extend over the bit line, insulated from the bit line by the third and fourth insulating films, and electrically connected to the conductive plug through the second aperture.
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Futo Wataru
Hashimoto Koichi
Inoue Ken-ichi
Itabashi Kazuo
Tsuboi Osamu
Armstrong, Kratz, Quintos Hanson & Brooks, LLP.
Baumeister B. William
Berry Renee R.
Fujitsu Limited
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