Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-08
2005-02-08
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S652000
Reexamination Certificate
active
06852613
ABSTRACT:
This invention provides a structure and method for improved transmission line operation on integrated circuits. One method of the invention includes forming transmission lines in an integrated circuit. The method includes forming a first layer of electrically conductive material on a substrate. A first layer of insulating material is formed on the first layer of the electrically conductive material. A pair of high permeability metal lines are formed on the first layer of insulating material. The pair of high permeability metal lines include permalloy and/or Ni45Fe55films. A transmission line is formed on the first layer of insulating material and between and parallel with the pair of high permeability metal lines. A second layer of insulating material is formed on the transmission line and the pair of high permeability metal lines. And, the method includes forming a second layer of electrically conductive material on the second layer of insulating material.
REFERENCES:
patent: 5135889 (1992-08-01), Allen
patent: 6226599 (2001-05-01), Namiki
Ahn Kie Y.
Akram Salman
Forbes Leonard
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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