Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-11-01
2005-11-01
Mai, Anh Duy (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S763000, C257S764000, C257S781000
Reexamination Certificate
active
06960831
ABSTRACT:
A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.
REFERENCES:
patent: 5391516 (1995-02-01), Wojnarowski et al.
patent: 5523626 (1996-06-01), Hayashi et al.
patent: 5674781 (1997-10-01), Huang et al.
patent: 6005291 (1999-12-01), Koyanagi et al.
patent: 6187680 (2001-02-01), Costrini et al.
patent: 6191023 (2001-02-01), Chen
patent: 6239494 (2001-05-01), Besser et al.
patent: 6242078 (2001-06-01), Pommer et al.
patent: 6333559 (2001-12-01), Costrini et al.
patent: 6350667 (2002-02-01), Chen et al.
patent: 6410986 (2002-06-01), Merchant et al.
patent: 6435398 (2002-08-01), Hartfield et al.
patent: 6620720 (2003-09-01), Moyer et al.
patent: 2001/0051426 (2001-12-01), Pozder et al.
patent: 2002/0068385 (2002-06-01), Ma et al.
patent: 07-078821 (1995-03-01), None
Burrell Lloyd G.
Kelly Adreanne A.
McKnight Samuel R.
Wong Kwong H.
Blecker Ira D.
Duy Mai Anh
International Business Machines - Corporation
LandOfFree
Semiconductor device having a composite layer in addition to... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having a composite layer in addition to..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having a composite layer in addition to... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3496928