Method of manufacturing a flash memory cell

Details Method of manufacturing a flash memory cell Method of manufacturing a flash memory cell

2005-02-08

2005-02-08

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S696000, C438S784000, C438S738000

Reexamination Certificate

active

06852595

ABSTRACT:
Methods of manufacturing flash memory cells. During a cleaning process after an etching process for forming a control gate is performed, polymer remains at the sidewall of a tungsten silicide layer. Therefore, the sidewall of the tungsten silicide layer is protected from a subsequent a self-aligned etching process. In addition, upon a self-aligned etching process, the etch selective ratio of the tungsten silicide layer to a polysilicon layer is sufficiently obtained using a mixed gas of HBr/O2. Therefore, etching damage to the sidewall of the tungsten silicide layer can be prevented. As a result, reliability of the process and an electrical characteristic of the resulting device are improved.

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