System and method to form a composite film stack utilizing...

Details System and method to form a composite film stack utilizing... System and method to form a composite film stack utilizing...

2005-02-01

2005-02-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S769000, C438S775000, C438S770000, C438S685000, C438S683000, C438S682000, C257S751000, C427S255290

Reexamination Certificate

active

06849545

ABSTRACT:
A system and method to form a stacked barrier layer for copper contacts formed on a substrate. The substrate is serially exposed to first and second reactive gases to form an adhesion layer. Then, the adhesion layer is serially exposed to third and fourth reactive gases to form a barrier layer adjacent to the adhesion layer. This is followed by deposition of a copper layer adjacent to the barrier layer.

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