Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-11-01

2005-11-01

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S335000

Reexamination Certificate

active

06960511

ABSTRACT:
A semiconductor device, which can prevent a current capability from deteriorating with time, is disclosed. A P-channel type LDMOS is formed in an N-type monocrystal silicon substrate. The P-channel type LDMOS includes: a P-type impurity diffusion layer formed in a well shape so as to reach a predetermined depth; a channel well layer formed by double-diffusing N-type impurities; a source diffusion layer; a potential fixing electrode; drain-contact electrode; a LOCOS oxide film; a gate electrode; a drain electrode; a source electrode; and so on. Especially, the gate electrode is formed so as to overlap onto the LOCOS oxide film, and its protrusion amount onto the LOCOS oxide film (gate overlap length O/L) is set to about 10 μm, which is substantially ½ of a width size of the LOCOS oxide film.

REFERENCES:
patent: 4750024 (1988-06-01), Schreck
patent: 5141880 (1992-08-01), Inoue et al.
patent: 5192872 (1993-03-01), Lee
patent: 5304827 (1994-04-01), Malhi et al.
patent: 5313082 (1994-05-01), Eklund
patent: 5366916 (1994-11-01), Summe et al.
patent: 5382536 (1995-01-01), Malhi et al.
patent: 5382821 (1995-01-01), Nakajima
patent: 5501994 (1996-03-01), Mei
patent: 5548147 (1996-08-01), Mei
patent: 5777365 (1998-07-01), Yamaguchi et al.
patent: 5811850 (1998-09-01), Smayling et al.
patent: 5917217 (1999-06-01), Kitamura et al.
patent: 5929478 (1999-07-01), Parris et al.
patent: 6025231 (2000-02-01), Hutter et al.
patent: 6025237 (2000-02-01), Choi
patent: 6160290 (2000-12-01), Pendharkar et al.
Wolf, “Silicon Processing for the VLSI Era,” 1990, p. 66-67.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3491177