Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2005-02-01

2005-02-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S724000

Reexamination Certificate

active

06849539

ABSTRACT:
A method for simply forming a miniature contact hole in a self-aligned manner with a wiring layer. A gate insulating film, a gate electrode, and a protective insulating layer are formed on the surface of a silicon substrate, and a blanket insulating film is deposited over the entire surface to cover a source/drain diffusion layer. Subsequently, an interlayer insulating film is laminated on the blanket insulating film. Nitrogen is added to a mixture gas of C5F8and O2, and the resulting mixture gas is excited by a plasma for use as an etching gas. The interlayer insulating film is etched by reactive ion etching (RIE) using the blanket insulating film as an etching stopper to form a contact hole. A silicon nitride film is preferably used for the protective insulating layer. A silicon nitride film or a silicon carbide film is preferably used for the blanket insulating film.

REFERENCES:
patent: 5670404 (1997-09-01), Dai
patent: 5997757 (1999-12-01), Nagayama et al.
patent: 6071802 (2000-06-01), Ban et al.
patent: 6159862 (2000-12-01), Yamada et al.
patent: 6352921 (2002-03-01), Han et al.
patent: 9-50986 (1997-02-01), None
patent: 2001-0020758 (2001-06-01), None

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