Semiconductor devices and methods for fabricating the same

Details Semiconductor devices and methods for fabricating the same Semiconductor devices and methods for fabricating the same

2005-10-25

2005-10-25

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S289000, C438S981000

Reexamination Certificate

active

06958278

ABSTRACT:
Semiconductor devices having a dual gate and method for fabricating the same are disclosed. A disclosed example method comprises: forming dummy gates in a semiconductor substrate; sequentially forming a lightly doped drain (LDD) region, a spacer and a source/drain; depositing an insulation film above the semiconductor substrate; exposing the dummy gates by planarizing the insulation film; removing the dummy gates; selectively injecting impurities into a region associated with at least one of the removed dummy gates; forming gate oxide films having different thicknesses on the regions associated with the removed dummy gates; depositing a polysilicon layer above the gate oxide films; and then forming polysilicon gates by planarizing the polysilicon layer.

REFERENCES:
patent: 5024960 (1991-06-01), Haken
patent: 5670397 (1997-09-01), Chang et al.
patent: 5770490 (1998-06-01), Frenette et al.
patent: 6214671 (2001-04-01), Sun
patent: 2002/0064964 (2002-05-01), Jang et al.

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