Strained silicon layer semiconductor product employing...

Details Strained silicon layer semiconductor product employing... Strained silicon layer semiconductor product employing...

2005-08-02

2005-08-02

Wilson, Christian (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S933000, C257S347000, C257S616000

Reexamination Certificate

active

06924181

ABSTRACT:
A strained silicon layer fabrication and a method for fabrication thereof employ a strained insulator material layer formed over a strained silicon layer in turn formed upon a strained silicon-germanium alloy material layer which is formed upon a relaxed material substrate. The strained insulator material layer provides increased fabrication options which provide for enhanced fabrication efficiency when fabricating the strained silicon layer fabrication.

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