Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-09
2005-08-09
Schillinger, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S218000, C438S228000
Reexamination Certificate
active
06927116
ABSTRACT:
A first well of the same conductivity type as that of a semiconductor substrate and a second well of a conductivity type opposite to that of the semiconductor substrate, are formed in the semiconductor substrate. The second well isolates the semiconductor substrate and the first well from each other. Phosphorus ions for forming the bottom of the second well are implanted into the semiconductor substrate more deeply than boron ions for forming the first well. The depths to which these ions are implanted can be varied by acceleration energy of the ions. If the ions are so implanted, the total sum of impurities constituting the second well can be decreased within the surface area of the first well.
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Banner & Witcoff , Ltd.
Kabushiki Kaisha Toshiba
Schillinger Laura M
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