Semiconductor device with nanoclusters

Details Semiconductor device with nanoclusters Semiconductor device with nanoclusters

2005-10-25

2005-10-25

Zarneke, David A. (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000

Reexamination Certificate

active

06958265

ABSTRACT:
A process of forming a device with nanoclusters. The process includes forming nanoclusters (e.g. silicon nanocrystals) and forming an oxidation barrier layer over the nanoclusters to inhibit oxidizing agents from oxidizing the nanoclusters during a subsequent formation of a dielectric of the device. At least a portion of the oxidation barrier layer is removed after the formation of the dielectric. In one example, the device is a memory wherein the nanoclusters are utilized as charge storage locations for charge storage transistors of the memory. In this example, the oxidation barrier layer protects the nanoclusters from oxidizing agents due to the formation of gate dielectric for high voltage transistors of the memory.

REFERENCES:
patent: 6297095 (2001-10-01), Muralidhar et al.
patent: 6320784 (2001-11-01), Muralidhar et al.
patent: 6444545 (2002-09-01), Sadd et al.
Cavins et al., “A Nitride-Oxide Blocking Layer for Scaled SONOS Non-Volatile Memory,”Motorola, Inc.,Jan. 10, 2002, 5 pages.
Cavins et al., “Integrated Stacked Gate Oxide and Interpoly Oxide,”Motorola, Inc.,,Nov. 1996, pp. 93-94.

Affiliated with

Also associated with

Rating

Semiconductor device with nanoclusters does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device with nanoclusters, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device with nanoclusters will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3484334