Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-12-06
2005-12-06
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S627000, C438S656000
Reexamination Certificate
active
06972254
ABSTRACT:
A manufacturing method for an integrated circuit has a substrate with a semiconductor device thereon. A channel dielectric layer is deposited over the device and has an opening provided therein. A reducing process is performed in order to reduce the oxidation on the conductor and a conformal atomic liner is deposited in an atomic layer thickness to line the opening in the channel dielectric layer. A barrier layer is deposited over the conformal atomic liner and a seed layer is deposited over the barrier layer. A conductor core layer is deposited on the seed layer, filling the opening over the barrier layer and connecting to the semiconductor device.
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Lopatin Sergey D.
Ngo Minh Van
Advanced Micro Devices , Inc.
Ishimaru Mikio
Weiss Howard
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