Silicon-on-insulator chip with multiple crystal orientations

Details Silicon-on-insulator chip with multiple crystal orientations Silicon-on-insulator chip with multiple crystal orientations

2005-06-07

2005-06-07

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S154000, C438S166000, C438S198000, C438S199000, C257S369000, C257S371000, C257S374000

Reexamination Certificate

active

06902962

ABSTRACT:
A silicon-on-insulator chip includes an insulator layer, typically formed over a substrate. A first silicon island with a surface of a first crystal orientation overlies the insulator layer and a second silicon island with a surface of a second crystal orientation also overlies the insulator layer. In one embodiment, the silicon-on-insulator chip also includes a first transistor of a first conduction type formed on the first silicon island, and a second transistor of a second conduction type formed on the second silicon island. For example, the first crystal orientation can be (110) while the first transistor is a p-channel transistor, and the second crystal orientation can be (100) while the second transistor is an n-channel transistor.

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