Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2005-08-30
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S304000, C257S309000, C257S311000, C257S534000
Reexamination Certificate
active
06936879
ABSTRACT:
Disclosed is a method of increasing the capacitance of a trench capacitor by increasing sidewall area, comprising: Corming a trench in a silicon substrate, the trench having a sidewall; forming islands on the sidewall of the trench; and etching pits into the sidewall using the islands as a mask. The capacitor is completed by forming a node insulator on the pits and the sidewall; and filling said trench with a trench conductor.
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Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Ma William H.
Prenty Mark V.
Sabo William D.
Schmeiser Olsen & Watts
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