Method for fabricating copper interconnects

Details Method for fabricating copper interconnects Method for fabricating copper interconnects

2005-12-20

2005-12-20

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S628000, C438S644000

Reexamination Certificate

active

06977218

ABSTRACT:
A method for capping copper or copper alloy interconnects. A dielectric layer is formed overlaying a semiconductor substrate. An opening is formed in the dielectric layer and subsequently embedded copper or copper alloy form an interconnect structure. A silicon layer is formed on the copper or copper alloy by sputtering or chemical vapor deposition. A copper silicide layer is formed by reacting the silicon layer with the underlying copper or copper alloy as a capping layer.

REFERENCES:
patent: 4910169 (1990-03-01), Hoshino
patent: 5447887 (1995-09-01), Filipiak et al.
patent: 5693563 (1997-12-01), Teong
patent: 6153523 (2000-11-01), Van Ngo et al.
patent: 6211084 (2001-04-01), Ngo et al.
patent: 6261952 (2001-07-01), Ngo et al.
patent: 6335283 (2002-01-01), Ngo et al.
patent: 6339025 (2002-01-01), Liu et al.
patent: 6429128 (2002-08-01), Besser et al.
patent: 6472755 (2002-10-01), Ngo et al.
patent: 6492266 (2002-12-01), Ngo et al.
patent: 6521523 (2003-02-01), Lee et al.
patent: 6596631 (2003-07-01), Ngo et al.
patent: 6680249 (2004-01-01), Lu et al.
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