Semiconductor device with alternating conductivity type...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S339000, C257S342000, C257S343000, C438S212000, C438S268000

Reexamination Certificate

active

06936892

ABSTRACT:
A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on-resistance while maintaining a high breakdown voltage. The semiconductor device includes a semiconductive substrate region, through which a current flows in the ON-state of the device and that is depleted in the OFF-state. The semiconductive substrate region includes a plurality of vertical alignments of n-type buried regions32and a plurality of vertical alignments of p-type buried regions. The vertically aligned n-type buried regions and the vertically aligned p-type buried regions are alternately arranged horizontally. The n-type buried regions and p-type buried regions are formed by diffusing respective impurities into highly resistive n-type layers32alaminated one by one epitaxially.

REFERENCES:
patent: 5216275 (1993-06-01), Chen
patent: 5438215 (1995-08-01), Tihanyi
patent: 6037632 (2000-03-01), Omura et al.
patent: 6081009 (2000-06-01), Neilson
patent: 6184555 (2001-02-01), Tihanyi et al.
patent: 19839970 (2000-03-01), None
patent: 0053854 (1982-06-01), None
patent: 9266311 (1997-10-01), None
patent: 9729518 (1997-08-01), None

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