Method for forming structures in finfet devices

Details Method for forming structures in finfet devices Method for forming structures in finfet devices

2005-02-08

2005-02-08

Blum, David S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S283000

Reexamination Certificate

active

06852576

ABSTRACT:
A method forms fin structures for a semiconductor device. The method includes forming a first fin structure including a dielectric material and including a first side surface and a second side surface; forming a second fin structure adjacent the first side surface of the first fin structure; and forming a third fin structure adjacent the second side surface of the first fin structure. The second fin structure and the third fin structure are formed of a different material than the first fin structure.

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