Method and apparatus for nitride spacer etch process...

Details Method and apparatus for nitride spacer etch process... Method and apparatus for nitride spacer etch process...

2005-12-20

2005-12-20

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S724000

Reexamination Certificate

active

06977184

ABSTRACT:
A method for fabricating a spacer of a gate structure is provided. The method performing a first etch process implementing a first etchant gas. The first etch process is configured to implement an interferometry endpoint (IEP) detection method to detect a removal of a portion of a spacer layer having a specific thickness from over the surface of the substrate, thus leaving a thin spacer layer. The method further includes performing a second etch process for a predetermined period of time implementing a second etchant gas. The second etch process is configured to remove the thin spacer layer, leaving the spacer for the gate structure.

REFERENCES:
patent: 4618262 (1986-10-01), Maydan et al.
patent: 5372673 (1994-12-01), Stager et al.
patent: 5741396 (1998-04-01), Loewenstein
patent: 5756216 (1998-05-01), Becker et al.
patent: 5912188 (1999-06-01), Gardner et al.
patent: 5968844 (1999-10-01), Keller
patent: 6051504 (2000-04-01), Armacost et al.
patent: 6122050 (2000-09-01), Rutzke
patent: 6180535 (2001-01-01), Wu et al.
patent: 6207544 (2001-03-01), Nguyen et al.
patent: 6225203 (2001-05-01), Liu et al.
patent: 6228277 (2001-05-01), Kornblit et al.
patent: 6277700 (2001-08-01), Yu et al.
patent: 6333271 (2001-12-01), Chiu et al.
patent: 6635185 (2003-10-01), Demmin et al.
patent: 2001/0009245 (2001-07-01), Allen, III

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