Surface treatment of metal interconnect lines

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S597000, C438S687000

Reexamination Certificate

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06955984

ABSTRACT:
Methods and apparatus for forming a semiconductor structure comprising a first layer on top of a substrate wherein the first layer defines conductive regions such as copper interconnect lines and non-conductive regions such as dielectric materials. The conductive regions are covered by a second layer of a material different than the first layer such as for example nickel and then the structure is heat treated such that the interconnect lines and second metal, such as a copper interconnect line and a nickel second layer, interact with each other to form an alloy layer. The alloy layer has superior qualities for adhering to both the copper interconnect lines and a subsequently deposited dielectric material.

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Saito, T., et al., “A Novel Copper Interconnection Technology Using Self Aligned Metal Capping Method,” IEEE (Jun. 2001) pp. 15-17.

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