Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-06-07

2005-06-07

Prenty, Mark V. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S294000

Reexamination Certificate

active

06902976

ABSTRACT:
A semiconductor device is disclosed, which comprises trench type device isolation regions formed in a semiconductor substrate, semiconductor active regions electrically isolated by the isolation regions, a first electrode layer formed to self-align to the isolation regions, and a second electrode layer formed over the first electrode layer with an insulating film interposed therebetween, the top of each of the isolation regions being located, in an area where the second electrode layer is present, at a first level below the top of the first electrode layer and above the surface of the active regions and, in an area where the second electrode layer is not present, at a second level below the first level, and the surface of the active regions being at substantially the same level in the area where the second electrode layer is present and in the area where the second electrode layer is not present.

REFERENCES:
patent: 6661052 (2003-12-01), Matsui et al.
patent: 2002/0017692 (2002-02-01), Shimizu et al.
patent: 2002/0036317 (2002-03-01), Matsui et al.
patent: 2000-245029 (2000-09-01), None
patent: 2000-291910 (2000-10-01), None

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