Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-11-15
2005-11-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S303000, C257S306000, C257S310000, C257S311000, C257S762000
Reexamination Certificate
active
06965140
ABSTRACT:
It is an object of the present invention to provide a high-reliability semiconductor device having a storage capacitor and wiring using copper for a main conductive film. Under the above object, the present invention provides a semiconductor device comprising: a semiconductor substrate; a storage capacitor formed on the main surface side of the semiconductor substrate and being a first electrode and a second electrode arranged so as to put a capacitor insulation film; a wiring conductor formed on the main surface side of the semiconductor substrate and including the copper (Cu) element; and a first film formed on the surface of the wiring conductor; wherein a material configuring the first film and a material configuring the first electrode and/or the second electrode include the same element.
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Nikkei Microdevice (pp. 74-77) Jun. issue in 1992.
Asano Isamu
Iwasaki Tomio
Kumagai Yukihiro
Miura Hideo
Ohta Hiroyuki
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Huynh Andy
Nelms David
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