Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-10-04
2005-10-04
Brewster, William M. (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S654000, C438S685000, C438S785000
Reexamination Certificate
active
06951813
ABSTRACT:
The invention includes methods of forming metal-containing layers. The layers can, in particular aspects, consist essentially of metal, or consist of metal. The desired layers can be formed by initially depositing a metal-containing layer which comprises metal and halogen atoms. Subsequently, trialkylaluminum is utilized to remove the halogen atoms from the layer. The layer remaining after removal of the halogen atoms can comprise, consist essentially, or consist of any suitable metal, and in particular aspects can consist essentially of, or consist of, titanium or titanium/aluminum.
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Brewster William M.
Micro)n Technology, Inc.
Wells St. John P.S.
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