Method of fabricating split gate flash memory device

Details Method of fabricating split gate flash memory device Method of fabricating split gate flash memory device

2005-10-25

2005-10-25

Chaudhuri, Olik (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S265000

Reexamination Certificate

active

06958274

ABSTRACT:
A method of fabricating a split gate flash memory device by which stringer generation is prevented. The method includes forming a first gate pattern covered with a cap layer on a semiconductor substrate in an active area, and forming an etchant-resistant layer covering one side of the first gate pattern, the etchant-resistant layer extending to a surface of the substrate to cover one confronting side of a neighboring first gate pattern in the active area. The method also includes forming an insulating layer on an exposed surface of the first gate pattern, and forming a second gate pattern covering the first gate pattern and the insulating layer, the second gate pattern not overlapping the etch-resistant layer. The method further includes removing the etch-resistant layer, and forming a pair of doped regions in the substrate aligned with the first and second gate patterns.

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